Journal
APPLIED PHYSICS LETTERS
Volume 120, Issue 23, Pages -Publisher
AIP Publishing
DOI: 10.1063/5.0094708
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Funding
- Japan Science and Technology Corporation (JST), Core Research for Evolutional Science and Technology (CREST) [JPMJCR19K2]
- Japan Society for the Promotion of Science (JSPS) [19K04475]
- New Energy and Industrial Technology Development Organization (NEDO)
- Grants-in-Aid for Scientific Research [19K04475] Funding Source: KAKEN
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The interface properties of strong correlated electron system/band semiconductor junctions in the La1-xSrxVO3/p-Si(100) structure were investigated. Spectroscopic observations showed that the electronic structure of the interface exhibited insulator/semiconductor junctions for x <= 0.2 and Schottky junctions for x >= 0.25. The energy barriers that could not be explained by spectroscopy were estimated using the thermionic emission model fitting of the forward current density-bias voltage (J-V) characteristics, indicating that the injected carriers from Si to La1-xSrxVO3 can also experience the Coulomb repulsion force at the interface.
The interface properties of strongly correlated electron system/band semiconductor junctions were investigated in the La1-xSrxVO3/p-Si(100) structure. Spectroscopic observations show that the electronic structure of the interface is typical of insulator/semiconductor junctions for x <= 0.2 and Schottky junctions for x >= 0.25. For the forward current density-bias voltage (J-V) characteristics, energy barriers that were otherwise unexplainable by spectroscopy were estimated from the thermionic emission model fitting of the J-V characteristics, indicating that the injected carriers from Si to La1-xSrxVO3 can also feel the correlation force of Coulomb repulsion at the interface. Published under an exclusive license by AIP Publishing.
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