Graphene/SOI-based self-powered Schottky barrier photodiode array

We have fabricated a four-element graphene/silicon on insulator (SOI) based Schottky barrier photodiode array (PDA) and investigated its optoelectronic device performance. In our device design, monolayer graphene is utilized as a common electrode on a lithographically defined linear array of n-type Si channels on a SOI substrate. As revealed by wavelength resolved photocurrent spectroscopy measurements, each element in the PDA structure exhibited a maximum spectral responsivity of around 0.1 A/W under a self-powered operational mode. Time-dependent photocurrent spectroscopy measurements showed excellent photocurrent reversibility of the device with ~1.36 and ~1.27 mu s rise time and fall time, respectively. Each element in the array displayed an average specific detectivity of around 1.3 x 10(12) Jones and a substantially small noise equivalent power of ~0.14 pW/Hz(-1/2). The study presented here is expected to offer exciting opportunities in terms of high value-added graphene/Si based PDA device applications such as multi-wavelength light measurement, level metering, high-speed photometry, and position/motion detection.

Automated summary

In this study, a graphene/silicon on insulator based photodiode array was fabricated and its optoelectronic device performance was investigated. The results showed that each element in the array exhibited high spectral responsivity and excellent photocurrent reversibility under a self-powered operational mode, with good detectivity and low noise equivalent power.