4.6 Article

Recombination dynamics of indirect excitons in hexagonal BN epilayers containing polytypic segments grown by chemical vapor deposition using carbon-free precursors

Journal

APPLIED PHYSICS LETTERS
Volume 120, Issue 23, Pages -

Publisher

AIP Publishing
DOI: 10.1063/5.0090431

Keywords

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Funding

  1. MEXT-Program of Dynamic Alliance for Open Innovation Bridging Human, Environment and Materials
  2. JSPS KAKENHI [JP16H06427, JP18K04231, JP20K20993, JP22H01516]
  3. MEXT
  4. Tsukuba Innovation Arena (TIA) collaborative research program Kakehashi, Japan

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Hexagonal BN, a semiconductor with a two-dimensional honeycomb structure, shows high quantum efficiency and has potential applications in deep-ultraviolet light emitters. Luminescence measurements were conducted to study the emission dynamics of indirect excitons in hexagonal BN, revealing the presence of polytypic segments and their specific luminescent properties. Graphitic bernal BN also exhibited significant emissions.
Hexagonal (h) BN is a semiconductor that crystallizes in layers of a two-dimensional honeycomb structure. Since hBN exhibits high quantum efficiency (QE) near-band edge emission at around 5.8 eV in spite of the indirect bandgap, hBN has a potential for the use in deep-ultraviolet light emitters. For elucidating the emission dynamics of indirect excitons (iXs) in hBN, spatially and temporally resolved luminescence measurements were carried out on hBN epilayers grown using carbon-free precursors. In addition to major mu m-side flat-topped (0001) hBN columnar grains, sub- mu m-scale polytypic segments were identified, which were likely formed by certain growth instabilities. The hBN domains exhibited predominant emissions of phonon-assisted fundamental iXs at 5.7-5.9 eV and a less-pronounced 4.0-eV emission band. The photoluminescence lifetime ( tau PL) for the iX emissions was 54 ps, which most likely represents the midgap recombination lifetime ( tau MGR) for an iX reservoir. Because tau PL did not change while the cathodoluminescence (CL) intensity increased with temperature above 100 K, both the immobile character of iXs and strong exciton-phonon interaction seem significant for procreating the high QE. The CL intensity and tau PL of the 5.5 eV band monotonically decreased with temperature, indicating that tau PL represents tau MGR, most probably a nonradiative lifetime, around the real states. Equally significant emissions at 6.035 eV at 12 K and 6.0-6.1 eV at 300 K were observed from the polytypic segments, most probably graphitic bernal BN, which also exhibited negligible thermal quenching property. Published under an exclusive license by AIP Publishing.

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