4.6 Article

Correlation between changeover from weak antilocalization (WAL) to weak localization (WL) and positive to negative magnetoresistance in S-doped Bi1.5Sb0.5Te1.3Se1.7

Journal

APPLIED PHYSICS LETTERS
Volume 121, Issue 3, Pages -

Publisher

AIP Publishing
DOI: 10.1063/5.0094556

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Funding

  1. DST-SERB [SRG/2019/001187]
  2. UGC [F 30-505/2020(BSR)]

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The magneto-transport and ARPES of the S-doped Bi1.5Sb0.5Te1.3Se1.7 system were investigated, and both pMR and nMR, as well as a transition from WAL to WL, were observed. The interplay between pMR and nMR was elucidated, and the topological surface state bands were explored using ARPES.
The magneto-transport and angle-resolved photoelectron spectroscopy (ARPES) of the S-doped Bi1.5Sb0.5Te1.3Se1.7 system have been investigated. Both the positive magnetoresistance (pMR) and negative magnetoresistance (nMR) under a perpendicular magnetic field as well as a changeover from weak antilocalization (WAL) to weak localization (WL) are observed. The interplay between pMR and nMR is elucidated in terms of the dephasing and spin-orbit scattering time scales. The topological surface state bands have been explored using ARPES.

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