Related references
Note: Only part of the references are listed.Influence of interlayer GeOx thickness on band alignment of Al2O3/GeOx/Ge structure
Jinjuan Xiang et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2020)
Hole mobility degradation by remote Coulomb scattering and charge distribution in Al2O3/GeOx gate stacks in bulk Ge pMOSFET with GeOx grown by ozone oxidation
Lixing Zhou et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2017)
Anomalous flatband voltage shift of AlFxOy/Al2O3 MOS capacitors: A consideration on dipole layer formation at dielectric interfaces with different anions
Jiayang Fei et al.
APPLIED PHYSICS LETTERS (2017)
Design of Al2O3/SiO2 laminated stacks with multiple interface dipole layers to achieve large flatband voltage shifts of MOS capacitors
Hironobu Kamata et al.
APPLIED PHYSICS LETTERS (2017)
Remote interfacial dipole scattering and electron mobility degradation in Ge field-effect transistors with GeOx/Al2O3 gate dielectrics
Xiaolei Wang et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2016)
Dependence of electrostatic potential distribution of Al2O3/Ge structure on Al2O3 thickness
Xiaolei Wang et al.
SURFACE SCIENCE (2016)
The physics and chemistry of the Schottky barrier height
Raymond T. Tung
APPLIED PHYSICS REVIEWS (2014)
Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy
M. K. Hudait et al.
JOURNAL OF APPLIED PHYSICS (2013)
Interface engineering and chemistry of Hf-based high-k dielectrics on III-V substrates
Gang He et al.
SURFACE SCIENCE REPORTS (2013)
High-Mobility Ge pMOSFET With 1-nm EOT Al2O3/GeOx/Ge Gate Stack Fabricated by Plasma Post Oxidation
Rui Zhang et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2012)
On the alleviation of Fermi-level pinning by ultrathin insulator layers in Schottky contacts
Winfried Moench
JOURNAL OF APPLIED PHYSICS (2012)
Interface structure and film polarization in epitaxial SrTiO3/Si(001)
A. M. Kolpak et al.
PHYSICAL REVIEW B (2012)
Improvement of Al2O3/Ge interfacial properties by O2-annealing
Shigehisa Shibayama et al.
THIN SOLID FILMS (2012)
Energy band alignment at interfaces of semiconducting oxides: A review of experimental determination using photoelectron spectroscopy and comparison with theoretical predictions by the electron affinity rule, charge neutrality levels, and the common anion rule
Andreas Klein
THIN SOLID FILMS (2012)
Branch-point energies and the band-structure lineup at Schottky contacts and heterostrucures
Winfried Moench
JOURNAL OF APPLIED PHYSICS (2011)
Surface analytical studies of interfaces in organic semiconductor devices
Yongli Gao
MATERIALS SCIENCE & ENGINEERING R-REPORTS (2010)
Band alignment at metal-semiconductor and metal-oxide interfaces
John Robertson
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2010)
Characteristics of atomic-layer-deposited Al2O3 high-k dielectric films grown on Ge substrates
Chao-Ching Cheng et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2008)
On the electric-dipole contribution to the valence-band offsets in semiconductor-oxide heterostructures
Winfried Moencha
APPLIED PHYSICS LETTERS (2007)
Band offsets of high K gate oxides on III-V semiconductors
J. Robertson et al.
JOURNAL OF APPLIED PHYSICS (2006)
Electronic properties of the Zr-ZrO2-SiO2-Si(100) gate stack structure
CC Fulton et al.
JOURNAL OF APPLIED PHYSICS (2006)
The role of nitrogen-related defects in high-k dielectric oxides:: Density-functional studies -: art. no. 053704
JL Gavartin et al.
JOURNAL OF APPLIED PHYSICS (2005)
Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology
YC Yeo et al.
JOURNAL OF APPLIED PHYSICS (2002)
Recent advances in Schottky barrier concepts
RT Tung
MATERIALS SCIENCE & ENGINEERING R-REPORTS (2001)
Band offsets of wide-band-gap oxides and implications for future electronic devices
J Robertson
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2000)
Share Paper
