Piezoelectricity across 2D Phase Boundaries

Piezoelectricity in low-dimensional materials and metal-semiconductor junctions has attracted recent attention. Herein, a 2D in-plane metal-semiconductor junction made of multilayer 2H and 1T ' phases of molybdenum(IV) telluride (MoTe2) is investigated. Strong piezoelectric response is observed using piezoresponse force microscopy at the 2H-1T ' junction, despite that the multilayers of each individual phase are weakly piezoelectric. The experimental results and density functional theory calculations suggest that the amplified piezoelectric response observed at the junction is due to the charge transfer across the semiconducting and metallic junctions resulting in the formation of dipoles and excess charge density, allowing the engineering of piezoelectric response in atomically thin materials.

Automated summary

Strong piezoelectric response is observed in a 2D in-plane metal-semiconductor junction made of multilayer 2H and 1T' phases of molybdenum(IV) telluride. The amplification of the piezoelectric response is attributed to the charge transfer across the semiconducting and metallic junctions, resulting in the formation of dipoles and excess charge density, allowing for the engineering of piezoelectric response in atomically thin materials.