Vapor-Assisted In Situ Recrystallization for Efficient Tin-Based Perovskite Light-Emitting Diodes

Tin-based perovskites are a promising candidates to replace their toxic lead-based counterparts in optoelectronic applications, such as light-emitting diodes (LEDs). However, the development of tin perovskite LEDs is slow due to the challenge of obtaining high-quality tin perovskite films. Here, a vapor-assisted spin-coating method is developed to achieve high-quality tin perovskites and high-efficiency LEDs. It is revealed that solvent vapor can lead to in situ recrystallization of tin perovskites during the film-formation process, thus significantly improving the crystalline quality with reduced defects. An antioxidant additive is further introduced to suppress the oxidation of Sn2+ and increase the photoluminescence quantum efficiency up to approximate to 30%, which is an approximately fourfold enhancement in comparison with that of the control method. As a result, efficient tin perovskite LEDs are achieved with a peak external quantum efficiency of 5.3%, which is among the highest efficiency of lead-free perovskite LEDs.

Automated summary

Tin-based perovskites show great potential to replace toxic lead-based materials in optoelectronic applications. However, the slow development of tin perovskite LEDs is hindered by the challenge of obtaining high-quality tin perovskite films. This study introduces a vapor-assisted spin-coating method to achieve high-quality tin perovskites and high-efficiency LEDs.