Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 32, Issue 41, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.202205144
Keywords
2D ferromagnetic materials; current pulses; domain wall velocities; in situ experiments; spin-transfer torque effect
Categories
Funding
- National Natural Science Foundation of China [51725101, 11727807, 51672050, 61790581, 22088101]
- Ministry of Science and Techology of China [2018YFA0209102, 2021YFA1200600]
- Infrastructure and Facility Construction Project of Zhejiang Laboratory
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This study demonstrates a current-pulse-driving strategy to boost the domain wall velocity in Fe3GeTe2, which could have potential applications in spintronic devices with 2D ferromagnetic materials.
Controlling the domain wall motion in the 2D ferromagnetic materials is significantly critical to the topological spin electronics, non-volatile magnetic memories, and logic devices. The elevation of the domain wall velocity has become an urgent challenge. Herein, a current-pulse-driving strategy is unprecedentedly established to boost the domain wall velocity with an out-of-plane magnetic field and a rising temperature in the Fe3GeTe2 by using the in situ Lorentz Transmission Electron Microscopy. Elevation of domain wall velocity depends on the demagnetization energy increase and Zeeman energy reduction, which originates from the magnetic moments tilting by a non-parallel to the magnetic field. By injecting approximate to 2000 times of alternative current pulses, a uniform instead of an unsynchronized domain wall velocity is achieved. The key mechanism lies in the decrease of the domain wall number, leading to a reduction in the expansion and compression of the domain areas. Optimized pulse parameters are applied with a critical duration of 60 ns and the density of approximate to 2 x 10(10) A m(-2), leading to an elevation of velocity from 0.0308 to 0.39 m s(-1). The elevation in magnetic domain wall velocity can be useful for the application of 2D van der Waals ferromagnetic materials in future spintronic devices.
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