4.8 Article

Discovery of a 2D Hybrid Silver/Antimony-Based Iodide Double Perovskite Photoferroelectric with Photostrictive Effect and Efficient X-Ray Response

Journal

ADVANCED FUNCTIONAL MATERIALS
Volume 32, Issue 40, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.202205918

Keywords

hybrid double perovskites; photoferroelectrics; photostrictive effect; x-ray detection

Funding

  1. National Key Research and Development Program of China [2017YFA0204800]
  2. National Natural Science Foundation of China [92056112, 61974085, 51790492, 22173019, 21875093, 22109057]
  3. Natural Science Foundation of Jiangxi Province [20204BCJ22015, 20202ACBL203001]

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A 2D iodide double perovskite photoferroelectric material based on Ag/Sb ions is reported in this study, demonstrating high Curie temperature, large spontaneous polarization, ferroelectric photovoltaic effect, and photostrictive effect. Additionally, the material exhibits impressive X-ray responsivity, making it a promising candidate for the next-generation optoelectronic devices.
2D hybrid halide double perovskites (HHDPs) have been demonstrated to be a promising alternative to conventional lead-based halide perovskites as a new system of photoferroelectrics, due to their unique characteristics of environmental friendliness, favorable stability, and fascinating optoelectronic properties. Herein, for the first time, a 2D iodide double perovskite photoferroelectric is reported based on Ag/Sb ions, (4,4-DFPD)(4)AgSbI8 (4,4-DFPD = 4,4-difluoropiperidinium), which possesses a high Curie temperature of 414 K (above BaTiO3), a large spontaneous polarization of 9.6 mu C cm(-2), ferroelectric photovoltaic effect, and photostrictive effect. Notably, to the best of the authors' knowledge, the discovery of photostriction in HHDP photoferroelectrics is unprecedented. Moreover, (4,4-DFPD)(4)AgSbI8 exhibits an impressive X-ray responsivity, with a sensitivity as high as 704.8 mu C Gy(air)(-1) cm(-2) at 100 V bias and a detection limit as low as 0.36 mu Gy(air) s(-1) at 10 V bias, both of which outperform the current all HHDP photoferroelectrics. This work enriches the photoferroelectric family, and proves that Ag/Sb-based HHDP photoferroelectrics are a promising candidate for the next-generation optoelectronic devices.

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