Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 32, Issue 36, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.202204255
Keywords
fluorination; fused-ring electron acceptors; molecular stackings; organic photodetectors; organic solar cells
Categories
Funding
- National Natural Science Foundation of China (NSFC) [51973032, 21905043, 51833004, 52172146]
- Jiangxi Provincial Natural Science Foundation [20212ACB203005]
- Thousand Talents Plan of Jiangxi Province [jxsq2019101051]
- Jiangxi Provincial Education Department Science and Technology Research Foundation [GJJ210310]
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University [KF2007]
- Research Grants Council (RGC) of Hong Kong [14303519]
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Non-fullerene acceptors (NFAs) with strong absorption and optical response in the near-infrared region (NIR) were developed. The effect of 2D central core fluorination on the molecular self-assembly and optoelectronic properties was explored. The results showed that NFAs based on 2D fluorinated acceptors exhibited higher efficiency and improved performance.
Developing non-fullerene acceptors (NFAs) with strong absorption and optical response in near-infrared region (NIR) is an imperative avenue for achieving efficient organic solar cells (OSCs) and NIR organic photodetectors (OPDs). Herein, four ultra-narrow bandgap NFAs with different alkyl side chains and 2D fluorinated or non-fluorinated phenyl substituents using dithienopyrrolecarbazole as electron-rich core are designed and synthesized for photoelectric devices. The effect of 2D central core fluorination on molecular self-assembly and optoelectronic properties is comprehensively explored. Due to the banana-type molecular conformation of these NFAs, they can easily form honeycomb-like 3D network stacking, and the central core fluorination is confirmed that can reduce pi-pi stacking distance and enhance intermolecular interaction, which result in smaller molecular stacking density. As a result, the 2D fluorinated acceptors based OSCs display more balanced and higher carrier mobilities, contributing to higher fill factor and efficiency. Moreover, the NIR OPD devices based on PTB7-Th:FDTPC-OD exhibit a superior responsivity of >0.4 A W-1 at 880 nm, a low dark current of approximate to 8 x 10(-11) A, and an excellent specific detectivity (D*) of >2.5 x 10(11) Jones. The NIR OPD also demonstrates excellent performance in photo-plethysmography and shows great potential for application in monitoring heart rate.
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