4.8 Article

Controlling Spin-Orbit Coupling to Tailor Type-II Dirac Bands

Journal

ACS NANO
Volume 16, Issue 7, Pages 11227-11233

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsnano.2c04301

Keywords

NiTe2; NiTe2-xSex; spin-orbit coupling; type-II Dirac band; density functional theory; scanning tunneling microscopy; scanning tunneling spectroscopy; angle-resolved photoelectron spectroscopy

Funding

  1. National Research Foundation (NRF) - Korean government [NRF-2018R1D1A1B07050144, NRF-2018R1A2B6004394, NRF2019R1A6A1A11053838, NRF-2019K1A3A7A09033389, NRF-2019M2C8A1057099, NRF-2020R1A2C200373211, NRF-2021R1A6A3A14040322]
  2. MOLIT as [Innovative Talent Education Program for Smart City]
  3. Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy [DE-AC02-05CH11231]

Ask authors/readers for more resources

In this study, the strength of spin-orbit coupling in NiTe2 is shown to be tunable through Se substitution, resulting in shifts of the bulk Dirac point while maintaining the type-II Dirac band. This approach provides an effective means of controlling the type-II Dirac band in NiTe2 and can be applicable to other topological materials.
NiTe2, a type-II Dirac semimetal with a strongly tilted Dirac band, has been explored extensively to understand its intriguing topological properties. Here, using density functional theory calculations, we report that the strength of the spin-orbit coupling (SOC) in NiTe2 can be tuned by Se substitution. This results in negative shifts of the bulk Dirac point (BDP) while preserving the type-II Dirac band. Indeed, combined studies using scanning tunneling spectroscopy and angle-resolved photoemission spectroscopy confirm that the BDP in the NiTe2-xSex alloy moves from +0.1 eV (NiTe2) to -0.3 eV (NiTeSe) depending on the Se concentrations, indicating the effective tunability of type-II Dirac Fermions. Our results demonstrate an approach to tailor the type-II Dirac band in NiTe2 by controlling the SOC strength via chalcogen substitution. This approach can be applicable to different types of topological materials.

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