4.8 Article

Nearly Ideal Two-Dimensional Electron Gas Hosted by Multiple Quantized Kronig-Penney States Observed in Few-Layer InSe

Journal

ACS NANO
Volume 16, Issue 8, Pages 13014-13021

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsnano.2c05556

Keywords

two-dimensional electron gas; Kronig-Penney model; indium selenide; scanning tunneling spectroscopy; density functional theory

Funding

  1. Ministry of Science and Technology (MOST) of China [2018YFE0202700]
  2. National Natural Science Foundation of China [12134019, 21773124, 11825405, 11974307]
  3. Beijing Municipal Natural Science Foundation [Z180007]
  4. Strategic Priority Research Program of the Chinese Academy of Sciences [XDB30000000]

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This study successfully realized ideal two-dimensional electron gas (2DEG) with multiple quantized states in few-layer InSe films, which provides possibilities for constructing high-performance electronic devices using two-dimensional van der Waals materials.
A theoretical ideal two-dimensional electron gas (2DEG) was characterized by a flat density of states independent of energy. Compared with conventional twodimensional free-electron systems in semiconductor heterojunctions and noble metal surfaces, we report here the achievement of ideal 2DEG with multiple quantized states in few-layer InSe films. The multiple quantum well states (QWSs) in few-layer InSe films are found, and the number of QWSs is strictly equal to the number of atomic layers. The multiple stair like DOS as well as multiple bands with parabolic dispersion both characterize ideal 2DEG features in these QWSs. Density functional theory calculations and numerical simulations based on quasi-bounded square potential wells described as the Kronig-Penney model provide a consistent explanation of 2DEG in the QWSs. Our work demonstrates that 2D van der Waals materials are ideal systems for realizing 2DEG hosted by multiple quantized Kronig-Penney states, and the semiconducting nature of the material provides a better chance for construction of high-performance electronic devices utilizing these states, for example, superlattice devices with negative differential resistance.

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