4.8 Article

Photodetection and Infrared Imaging Based on Cd3As2 Epitaxial Vertical Heterostructures

Journal

ACS NANO
Volume 16, Issue 8, Pages 12244-12252

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsnano.2c03051

Keywords

Dirac semimetal; epitaxial synthesis; vertical heterostructure; band bending; unbiased photodetection; infrared imaging

Funding

  1. National Natural Science Foundation of China [52150103, 11934005, 11874116]
  2. National Key Research and Development Program of China [2017YFA0303302, 2018YFA0305601]
  3. Science and Technology Commission of Shanghai [19511120500]
  4. Shanghai Municipal Science and Technol-ogy Major Project [2019SHZDZX01]
  5. Program of Shanghai Academic/Technology Research Leader [20XD1400200]
  6. Shanghai Basic Research Special Zone Plan [21TQ006]
  7. National Basic Research Program of China [2014CB921101, 2016YFA0300803]

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Cd3As2-based heteroepitaxial photodetectors with high responsivity and broadband response have been demonstrated, and can be utilized for imaging in the visible to near-infrared spectrum.
Due to the nontrivial electronic structure, Cd3As2 is predicted to possess various transport properties and outstanding photoresponses. Photodetectors based on topological materials are mostly made up of nanoplates, yet monolithic in situ heteroepitaxial Cd3As2 photodetectors are rarely reported to date owing to the crystal mismatch between Cd3As2 and semiconductors. Here, we demonstrate Cd3As2/ZnxCd1-xTe/GaSb vertical heteroepitaxial photodetectors via molecule beam epitaxy. By constructing dual-Schottky junctions, these photodetectors show high responsivity and external quantum efficiency in a broadband spectrum. Based on the strong and fast photoresponse, we achieved visible light to near-infrared imaging using a one-pixel imaging system with a galvo. Our results illustrate that the integration of three-dimensional Dirac semimetal Cd3As2 with semiconductors has potential applications in broadband photodetection and infrared cameras.

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