Journal
ACS NANO
Volume 16, Issue 8, Pages 13134-13143Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.2c06080
Keywords
van der Waals ferromagnet; Cr2Si2Te6; short-range crystalline order; insulator-metal transition; electronic structure
Categories
Funding
- Office of Basic Energy Sciences, Materials Sciences and Engineering Division, U.S. Department of Energy (DOE) [U1530402]
- U.S. DOE Office of Science User Facility
- U.S. DOE Office of Science Facility, at BNL
- National Natural Science Foundation of China (NSFC) [U1530402, 11811530001]
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division
- U.S. Department of Energy by Iowa State University [DE-AC02-07CH11358]
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Two-dimensional magnetic materials (2DMMs) are important for studying magnetic order and future spintronic devices. The defect-induced short-range crystal order in Cr2Si2Te6 can reduce its band gap, resulting in semiconducting behavior at low temperatures and metallic behavior at high pressures. The results of this study are helpful for designing conducting states in 2DMMs and call for spin-resolved measurement of the electronic structure.
Two-dimensional magnetic materials (2DMMs) are significant not only for studies on the nature of 2D long-range magnetic order but also for future spintronic devices. Of particular interest are 2DMMs where spins can be manipulated by electrical conduction. Whereas Cr2Si2Te6 exhibits magnetic order in few-layer crystals, its large band gap inhibits electronic conduction. Here we show that the defect-induced short-range crystal order in Cr2Si2Te6, on the length scale below 0.6 nm, induces a substantially reduced band gap and robust semiconducting behavior down to 2 K that turns to metallic above 10 GPa. Our results will be helpful in designing conducting states in 2DMMs and call for spin-resolved measurement of the electronic structure in exfoliated ultrathin crystals.
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