Related references
Note: Only part of the references are listed.Direct measurement of nanoscale filamentary hot spots in resistive memory devices
Sanchit Deshmukh et al.
SCIENCE ADVANCES (2022)
Engineering the Threshold Switching Response of Nb2O5-Based Memristors by Ti Doping
Shimul Kanti Nath et al.
ACS APPLIED MATERIALS & INTERFACES (2021)
Electric Field- and Current-Induced Electroforming Modes in NbOx
Sanjoy Kumar Nandi et al.
ACS APPLIED MATERIALS & INTERFACES (2020)
Localized Heating and Switching in MoTe2-Based Resistive Memory Devices
Isha M. Datye et al.
NANO LETTERS (2020)
Metal-oxide interface reactions and their effect on integrated resistive/threshold switching in NbOx
Shimul Kanti Nath et al.
NANOTECHNOLOGY (2020)
Conductive Filament Localization Within Crossbar Resistive Memories by Scanning Joule Expansion Microscopy
Etienne Puyoo et al.
IEEE ELECTRON DEVICE LETTERS (2020)
Schottky-Barrier-Induced Asymmetry in the Negative-Differential-Resistance Response of Nb/NbOx/Pt Cross-Point Devices
Shimul Kanti Nath et al.
PHYSICAL REVIEW APPLIED (2020)
Detection and spatial mapping of conductive filaments in metal/oxide/metal cross-point devices using a thin photoresist layer
Shimul Kanti Nath et al.
APPLIED PHYSICS LETTERS (2019)
Spontaneous current constriction in threshold switching devices
Jonathan M. Goodwill et al.
NATURE COMMUNICATIONS (2019)
Origin of Current-Controlled Negative Differential Resistance Modes and the Emergence of Composite Characteristics with High Complexity
Shuai Li et al.
ADVANCED FUNCTIONAL MATERIALS (2019)
Current Localization and Redistribution as the Basis of Discontinuous Current Controlled Negative Differential Resistance in NbOx
Sanjoy Kumar Nandi et al.
ADVANCED FUNCTIONAL MATERIALS (2019)
Switching dynamics of TaOx-based threshold switching devices
Jonathan M. Goodwill et al.
JOURNAL OF APPLIED PHYSICS (2018)
Biological plausibility and stochasticity in scalable VO2 active memristor neurons
Wei Yi et al.
NATURE COMMUNICATIONS (2018)
Switching dynamics of single and coupled VO2-based oscillators as elements of neural networks
Andrey Velichko et al.
INTERNATIONAL JOURNAL OF MODERN PHYSICS B (2017)
Joule heating effect in nonpolar and bipolar resistive random access memory
Mutsunori Uenuma et al.
APPLIED PHYSICS LETTERS (2015)
High-endurance megahertz electrical self-oscillation in Ti/NbOx bilayer structures
Shuai Li et al.
APPLIED PHYSICS LETTERS (2015)
Thermometry of Filamentary RRAM Devices
Eilam Yalon et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)
Threshold current reduction for the metal-insulator transition in NbO2-x-selector devices: the effect of ReRAM integration
Sanjoy Kumar Nandi et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2015)
Characterization of the temperature dependence of the thermoreflectance coefficient for conductive thin films
T. Favaloro et al.
REVIEW OF SCIENTIFIC INSTRUMENTS (2015)
Joule expansion imaging techniques on microlectronic devices
Stephane Grauby et al.
MICROELECTRONICS JOURNAL (2009)
Comparison of thermoreflectance and scanning thermal microscopy for microelectronic device temperature variation imaging: Calibration and resolution issues
Stephane Grauby et al.
MICROELECTRONICS RELIABILITY (2008)
Performance analysis of the transient thermo-reflectance method for measuring the thermal conductivity of single layer materials
PL Komarov et al.
INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER (2004)
Share Paper
