Journal
ACS APPLIED MATERIALS & INTERFACES
Volume -, Issue -, Pages -Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.2c09291
Keywords
GaN; near-hysteresis-free; interface engineering; hydraulic pressure sensing; optical device
Funding
- National Natural Science Foundation of China [62004088, 12074170]
- Shenzhen Natural Science Foundation Stability Support Program Project [20200925160044004, K20799112]
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In this paper, a compact and near-hysteresis-free hydraulic pressure sensor was developed through interface engineering in a GaN chip-scale optical device. The sensor demonstrated superior performance in hysteresis, stability, repeatability, and response time, indicating its significant potential for various practical applications.
In this work, a compact, near-hysteresis-free hydraulic pressure sensor is presented through interface engineering in a GaN chip-scale optical device. The sensor consists of a monolithic GaN-on-sapphire device responsible for light emission and detection and a multilevel microstructured polydimethylsiloxane (PDMS) film prepared through a low-cost molding process using sandpaper as a template. The micro-patterned PDMS film functions as a pressure-sensing medium to effectively modulate the reflectance properties at the sapphire interface during pressure loading and unloading. The interface engineering endows the GaN optical device with near-hysteresis-free performance over a wide pressure range of up to 0-800 kPa. Verified by a series of experimental measurements on its dynamic responses, the tiny hydraulic sensor exhibits superior performance in hysteresis, stability, repeatability, and response time, indicating its considerable potential for a broad range of practical applications.
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