Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 14, Issue 31, Pages 36217-36226Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.2c07015
Keywords
quantum dots; phase transformation control; Bi/Si(111); STM; two-dimensional
Funding
- Natural Sciences and Engineering Research Council of Canada (NSERC)
- Hart Professorship
- University of Toronto
- Canada Foundation for Innovation [RGPIN-2017-06069, RGPIN-2018-04642]
- NSERC
- Government of Ontario
- Fed Dev Ontario
- University of Toronto
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This research reports a phase transition-induced quantum dot system at the nanoscale, providing a new strategy for further downsizing of electronic devices.
Nanopatterns at near atomic dimensions with controllable quantum dot states (QDSs) are promising candidates for the continued downscaling of electronic devices. Herein, we report a phase transition-induced QD system achieved on the root 3 x root 3-Bi/Si(111) surface reconstruction, which points the way to a novel strategy on QDS implementation. Combining scanning tunneling microscopy, scanning tunneling spectroscopy, and density functional theory (DFT) calculations, the structure, energy dispersion, and size effect on band gap of the QDs are measured and verified. As-created QDs can be manipulated with a dot size down to 2 nm via Bi phase transformation, which, in turn, is triggered by thermal annealing at 700 K. The transition mechanism is also supported by our DFT calculations, and an empirical analytical model is developed to predict the transformation kinetics.
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