4.8 Article

Water-Soluble Polythiophene-Conjugated Polyelectrolyte-Based Memristors for Transient Electronics

Journal

ACS APPLIED MATERIALS & INTERFACES
Volume -, Issue -, Pages -

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsami.2c04752

Keywords

conjugated polyelectrolytes; water-soluble; polythiophene; transient electronics; resistive random access memory; memristor

Funding

  1. National Natural Science Foundation of China
  2. Shanghai Rising-Star Program
  3. Fundamental Research Funds for the Central Universities
  4. Natural Science Foundation of Shanghai
  5. Egyptian Academy of Scientific Research and Technology (ASRT)
  6. [51961145402]
  7. [51333002]
  8. [51973061]
  9. [21QA1402100]
  10. [50321041918013]
  11. [19ZR1413100]

Ask authors/readers for more resources

The key to protecting sensitive information stored in electronic memory devices is to develop transient electronic devices that can be quickly destroyed in an emergency. Researchers have successfully fabricated a flexible electronic device capable of protecting sensitive information by using a highly water-soluble active material. This device can emulate the learning and memorizing functions of biological systems and can be rapidly destroyed when water is added.
The key to protect sensitive information stored in electronic memory devices from disclosure is to develop transient electronic devices that are capable of being destroyed quickly in an emergency. By using a highly water-soluble polythiophene-conjugated polyelectrolyte PTT-NMI+Br- as an active material, which was synthesized by the reaction of poly[thiophene-alt-4,4-bis(6-bromohexyl)-4H-cyclopenta(1,2-b:5,4-b ')dithiophene] with N-methylimidazole, a flexible electronic device, Al/PTT- NMI+Br-/ITO-coated PET (ITO: indium tin oxide; PET: polyethylene terephthalate), is successfully fabricated. This device shows a typical nonvolatile rewritable resistive random access memory (RRAM) effect at a sweep voltage range of +/- 3 V and a history-dependent memristive switching performance at a small sweep voltage range of +/- 1 V. Both the learning/memorizing functions and the synaptic potentiation/depression of biological systems have been emulated. The switching mechanism for the PTT-NMI+Br--based electronic device may be highly associated with ion migration under bias. Once water is added to this device, it will be destructed rapidly within 20 s due to the dissolution of the active layer. This device is not only a typical transient device but can also be used for constructing conventional memristors with long-term stability after electronic packaging. Furthermore, the soluble active layer in the device can be easily recycled from its aqueous solution and reused for fabricating new transient memristors. This work offers a train of new thoughts for designing and constructing a neuromorphic computing system that can be quickly destroyed with water in the near future.

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