Transparent, Flexible, and Low-Operating-Voltage Resistive Switching Memory Based on Al2O3/IZO Multilayer

In this study, a different number of indium zinc oxide (IZO) interlayers are fabricated into Al2O3-based transparent resistive switching memory on a transparent indium tin oxide (ITO)/glass substrate at room temperature. Al2O3/IZO multilayer transparent memory has a transmittance of at least 65% in the wavelength range of 400-900 nm. In addition, the Al2O3/IZO multilayer transparent memory can achieve an electroforming voltage that is 35.7% lower than that of ITO/pure-Al2O3/IZO transparent memory. The fabricated Al2O3/IZO multilayer transparent memory exhibits typical bipolar resistive switching behavior, regardless of the number of IZO interlayers. Also, the fabricated Al2O3/IZO multilayer transparent memory has a low operating voltage within +/- 1.5 V. In addition, a flexible Al2O3/IZO multilayer transparent memory is fabricated using the same process on ITO-coated polyethylene terephthalate. The fabricated flexible transparent memory also maintains the resistive switching characteristics during the bending state.

Automated summary

In this study, a transparent resistive switching memory based on Al2O3 is fabricated by incorporating different numbers of IZO interlayers. The multilayer transparent memory exhibits high transmittance, low resistive forming voltage, and typical resistive switching behavior.