Journal
NPJ QUANTUM MATERIALS
Volume 7, Issue 1, Pages -Publisher
NATURE PORTFOLIO
DOI: 10.1038/s41535-022-00433-x
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Funding
- U.S. Department of Energy (DOE), Office of Science, Office of Basic Energy Sciences (BES), Materials Sciences and Engineering Division [DE-SC0022101]
- Gordon and Betty Moore Foundation's EPiQS initiative [GBMF9465]
- Simons Foundation as part of the Simons Collaboration
- US DOE [DE-SC0020128]
- U.S. Department of Energy (DOE) [DE-SC0022101, DE-SC0020128] Funding Source: U.S. Department of Energy (DOE)
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In this study, we used STM spectroscopy to measure the intrinsic bulk gap of monolayer 1 T '-WTe2 and demonstrated the significant changes in the gap magnitude induced by gate-induced electric fields. Our first-principles DFT-derived tight-binding model revealed the mechanism of spatial localization of bands and gate-induced spin splitting, providing a new avenue for realizing proximity induced non-trivial superconductivity in monolayer 1 T '-WTe2.
Monolayer 1 T '-WTe2 is a quantum spin Hall insulator with a gapped 2D-bulk and gapless helical edge states persisting to temperatures similar to 100 K. Despite the far-ranging interest, the magnitude of the bulk gap, the effect of gating on the 2D-band structure, as well the role interactions are not established. In this work we use STM spectroscopy to measure the intrinsic bulk gap of monolayer 1 T '-WTe2 and show that gate induced electric fields cause large changes of the gap magnitude. Our first-principles DFT-derived tight-binding model reveal that a combination of spatial localization of the conduction and valance bands and Rashba-like spin-orbit coupling leads to a gating induced spin-splitting of the 2D-bulk bands in the tens of meV, thereby reducing the band gap. Our work explains the large sensitivity of the band structure to electric fields and suggests a new avenue for realizing proximity induced non-trivial superconductivity in monolayer 1 T '-WTe2.
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