Electron irradiation-induced defects for reliability improvement in monolayer MoS2-based conductive-point memory devices

Monolayer molybdenum disulfide has been previously discovered to exhibit non-volatile resistive switching behavior in a vertical metal-insulator-metal structure, featuring ultra-thin sub-nanometer active layer thickness. However, the reliability of these nascent 2D-based memory devices was not previously investigated for practical applications. Here, we employ an electron irradiation treatment on monolayer MoS2 film to modify the defect properties. Raman, photoluminescence, and X-ray photoelectron spectroscopy measurements have been performed to confirm the increasing amount of sulfur vacancies introduced by the e-beam irradiation process. The statistical electrical studies reveal the reliability can be improved by up to 1.5x for yield and 11x for average DC cycling endurance in the devices with a moderate radiation dose compared to unirradiated devices. Based on our previously proposed virtual conductive-point model with the metal ion substitution into sulfur vacancy, Monte Carlo simulations have been performed to illustrate the irradiation effect on device reliability, elucidating a clustering failure mechanism. This work provides an approach by electron irradiation to enhance the reliability of 2D memory devices and inspires further research in defect engineering to precisely control the switching properties for a wide range of applications from memory computing to radio-frequency switches.

Automated summary

This study investigates the use of electron irradiation to improve the reliability of monolayer molybdenum disulfide memory devices. The research confirms the effect of irradiation on the devices and proposes a clustering failure mechanism for the improved reliability.