The resurrection of tellurium as an elemental two-dimensional semiconductor

The graphene boom has triggered a widespread search for novel elemental van der Waals materials thanks to their simplicity for theoretical modeling and easy access for material growth. Group VI element tellurium is an unintentionally p-type doped narrow bandgap semiconductor featuring a one-dimensional chiral atomic structure which holds great promise for next-generation electronic, optoelectronic, and piezoelectric applications. In this paper, we first review recent progress in synthesizing atomically thin Te two-dimensional (2D) films and one-dimensional (1D) nanowires. Its applications in field-effect transistors and potential for building ultra-scaled Complementary metal-oxide-semiconductor (CMOS) circuits are discussed. We will also overview the recent study on its quantum transport in the 2D limit and progress in exploring its topological features and chiral-related physics. We envision that the breakthrough in obtaining high-quality 2D Te films will inspire a revisit of the fundamental properties of this long-forgotten material in the near future.

Automated summary

The development of graphene has led to the search for new elemental van der Waals materials, and tellurium is one such material with promising applications in the field of electronic devices. This paper reviews recent progress in synthesizing thin films and nanowires of tellurium, discusses its applications in transistors and CMOS circuits, and explores its quantum transport and topological features. The breakthrough in obtaining high-quality thin films of tellurium is expected to inspire further research on its fundamental properties.