Triple-junction solar cells with 39.5% terrestrial and 34.2% space efficiency enabled by thick quantum well superlattices

Multijunction solar cell design is guided by both the theoretical optimal bandgap combination as well as the realistic limitations to materials with these bandgaps. For instance, triple-junction III-V multijunction solar cells commonly use GaAs as a middle cell because of its near-perfect material quality, despite its bandgap being higher than optimal for the global spectrum. Here, we modify the middle cell bandgap using thick GaInAs/GaAsP strain-balanced quantum well (QW) solar cells with excellent voltage and absorption. These high-performance QWs are incorporated into a triple-junction inverted metamorphic multijunction device consisting of a GaInP top cell, GaInAs/GaAsP QW middle cell, and lattice-mismatched GaInAs bottom cell, each of which has been highly optimized. We demonstrate triple-junction efficiencies of 39.5% and 34.2% under the AM1.5 global and AM0 space spectra, respectively, and the global efficiency is higher than previous record six-junction devices.

Automated summary

The design of multijunction solar cells takes into account both the theoretical optimal bandgap combination and the realistic limitations of materials. By modifying the bandgap of the middle cell using thick GaInAs/GaAsP strain-balanced quantum well solar cells, a high-efficiency triple-junction inverted metamorphic multijunction device has been achieved.