Van der Waals integration of high-κ perovskite oxides and two-dimensional semiconductors

High-performance n-type molybdenum disulfide and p-type tungsten diselenide field-effect transistors can be fabricated using single-crystal strontium titanate dielectrics that are transferred onto two-dimensional semiconductors with the help of van der Waals forces. Two-dimensional semiconductors can be used to build next-generation electronic devices with ultrascaled channel lengths. However, semiconductors need to be integrated with high-quality dielectrics-which are challenging to deposit. Here we show that single-crystal strontium titanate-a high-kappa perovskite oxide-can be integrated with two-dimensional semiconductors using van der Waals forces. Strontium titanate thin films are grown on a sacrificial layer, lifted off and then transferred onto molybdenum disulfide and tungsten diselenide to make n-type and p-type transistors, respectively. The molybdenum disulfide transistors exhibit an on/off current ratio of 10(8) at a supply voltage of 1 V and a minimum subthreshold swing of 66 mV dec(-1). We also show that the devices can be used to create low-power complementary metal-oxide-semiconductor inverter circuits.

Automated summary

High-performance field-effect transistors made of n-type molybdenum disulfide and p-type tungsten diselenide can be fabricated using single-crystal strontium titanate dielectrics and van der Waals forces. This integration provides a promising approach for building next-generation electronic devices with ultrascaled channel lengths.