Comparative investigation into polarization field-dependent internal quantum efficiency of semipolar InGaN green light-emitting diodes: A strategy to mitigate green gap phenomenon

Semipolar InGaN-made green light-emitting diodes (LEDs) have sparked tremendous interest within the photonics community in recent past as advantageous replacements for already operable polar (0001)-oriented LEDs due to reduction in efficiency droop and related green gap phenomenon. Nevertheless, any theoretical investigation in order to compare internal quantum efficiency (IQE); output power and 3 dB bandwidth (BW) within non-c-plane-oriented InGaN green LEDs is innately unavailable. This study intends to describe the consequence of strain-induced polarization field on aforesaid major optical and electronic characteristics of In0.29Ga0.71N/GaN green LED along semipolar (1012), (1122), (1011), (2021), (3031), (2021) and (1011) crystal orientations by introducing modified ABC model which involves the contribution from phase-space filling (PSF) and carrier drift leakage. Our numerical investigation illustrates that best IQE, droop ratio, light emission spectra, output power and I-V profile can be obtained from (1122)-oriented InGaN green LED due to inconsiderable appearance of intrinsic plus lattice-mismatch induced piezoelectric polarization charge. 3 dB BW and differential carrier lifetime (DLT) is also shown to be superior for this green LED structure. In addition with these, the evidence noticed from verification of external quantum efficiency (EQE) with previous experimental reports on semipolar (1122) InGaN green LEDs indicates reasonable accuracy of our theoretical approach.

Automated summary

Semipolar InGaN-made green light-emitting diodes (LEDs) have attracted significant attention for their potential as replacements for polar (0001)-oriented LEDs due to reduced efficiency droop and green gap phenomenon. However, theoretical investigations comparing internal quantum efficiency, output power, and 3 dB bandwidth in non-c-plane-oriented InGaN green LEDs are lacking. This study examines the impact of strain-induced polarization field on major optical and electronic characteristics of In0.29Ga0.71N/GaN green LED along different crystal orientations using a modified ABC model. The results demonstrate that (1122)-oriented InGaN green LED exhibits superior performance in terms of internal quantum efficiency, droop ratio, light emission spectra, output power, and I-V profile.