Research on junction temperature detection method of power electronic devices based on turn-off time and turn-off loss

The temperature-sensitive electrical parameter (TSEP) method is widely used in the extraction and prediction of junction temperature (T-j) of power semiconductor devices. In this paper, turn-off loss (E-off) and turn-off time (t(off)) are taken as temperature-sensitive electrical parameters. It is proved that the junction temperature of the insulated-gate bipolar transistor (IGBT) changes abruptly during switching. The common defects of a single temperature-sensitive electrical parameter, including collector current requirements and poor junction detection accuracy, are considered. Therefore, after proving the linear relationship between junction temperature, turn-off time, and turn-off loss, a hybrid model based on turn-off loss (E-off) and turn-off time (t(off)) is proposed to accurately extract junction temperature. The experimental results show that this method has the advantages of high precision and strong anti-jamming ability. (C) 2021 The Author(s). Published by Elsevier Ltd.

Automated summary

This paper discusses the use of the temperature-sensitive electrical parameter method for the extraction and prediction of junction temperature of power semiconductor devices, proposing a hybrid model based on turn-off loss and turn-off time. Experimental results demonstrate that this method has the advantages of high precision and strong anti-jamming ability.