Origins of magnetic memory and strong exchange bias bordering magnetic compensation in mixed-lanthanide systems

Unexpected physical phenomena resulting from the seemingly inconsequential substitutions of chemically similar lanthanide elements in the Pr1-xGdxScGe system are exploited to further the understanding of rare-earth magnetism and inform materials design. By directly probing magnetic moments of crystallographically indistinguishable Pr and Gd we solve the puzzles of how an unusual magnetic memory and strong exchange bias emerge at specific, easily predictable chemistries. Both effects are rooted in a robust antiparallel arrangement of large 4f magnetic moments of light and heavy lanthanides. This enables precise control of nearly zero net magnetization either opposed to, or aligned with, the external magnetic field that persists over a wide range of temperatures and fields. Further, spontaneous perturbations in the random distribution of lanthanide ions makes strong exchange bias possible in bulk single-phase compounds bordering magnetic compensation, consequently expanding the materials base beyond artificial magnetic multilayers and broadening the range of potential applications of the phenomenon.

Automated summary

The study explores the unexpected physical phenomena resulting from the seemingly inconsequential substitutions of chemically similar lanthanide elements in the Pr1-xGdxScGe system, which sheds light on rare-earth magnetism and materials design. The robust antiparallel arrangement of large 4f magnetic moments of light and heavy lanthanides enables precise control of net magnetization and gives rise to an unusual magnetic memory and strong exchange bias. This finding expands the materials base beyond artificial magnetic multilayers and broadens the range of potential applications of the phenomenon.