4.3 Article

Valley-dependent properties in two-dimensional Cr2COF MXene predicted from first principles

Journal

PHYSICAL REVIEW MATERIALS
Volume 6, Issue 4, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevMaterials.6.044001

Keywords

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Funding

  1. National Natural Science Foundation of China [11804190, 12074217]
  2. Shandong Provincial Natural Science Foundation [ZR2019QA011, ZR2019MEM013]
  3. Shandong Provincial Key Research and Development Program (Major Scientific and Technological Innovation Project) [2019JZZY010302]
  4. Shandong Provincial Science Foundation for Excellent Young Scholars [ZR2020YQ04]
  5. Qilu Young Scholar Program of Shandong University
  6. Taishan Scholar Program of Shandong Province

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Using first principles, we predict the existence of the intrinsic valley-related multiple Hall effect in two-dimensional Cr2COF MXene, and observe the valley-dependent band inversion due to strong spin-orbit interaction, resulting in the valley-polarized quantum anomalous Hall effect.
The search for valley-dependent exotic properties could enable quantum device applications and therefore attracts rapidly increasing attention. Here, using first principles, we predict existence of the intrinsic valley-related multiple Hall effect in two-dimensional (2D) Cr2COF MXene. Cr2COF MXene is a ferromagnetic semiconductor with a direct bandgap locating at the edges of the hexagonal Brillouin zone, endowing it with valley physics. Protected by time-reversal symmetry breaking and out-of-plane magnetization, the valleys are polarized spontaneously. Moreover, the valley polarization is sizeable in both the valence and conduction bands, benefiting the observation of the anomalous valley Hall effect. More remarkably, due to strong spin-orbit interaction, the valley-dependent band inversion occurs naturally, and thus, the valley-polarized quantum anomalous Hall effect can be realized simultaneously in Cr2COF MXene, giving rise to the intriguing intrinsic valley-related multiple Hall effect. In addition, this multiple Hall effect can be effectively engineered under strain. Our findings greatly enrich the research on valley-dependent physical properties in 2D systems.

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