Direct measurement of nanoscale filamentary hot spots in resistive memory devices

Resistive random access memory (RRAM) is an important candidate for both digital, high-density data storage and for analog, neuromorphic computing. RRAM operation relies on the formation and rupture of nanoscale conductive filaments that carry enormous current densities and whose behavior lies at the heart of this technology. Here, we directly measure the temperature of these filaments in realistic RRAM with nanoscale resolution using scanning thermal microscopy. We use both conventional metal and ultrathin graphene electrodes, which enable the most thermally intimate measurement to date. Filaments can reach 1300 degrees C during steady-state operation, but electrode temperatures seldom exceed 350 degrees C because of thermal interface resistance. These results reveal the importance of thermal engineering for nanoscale RRAM toward ultradense data storage or neuromorphic operation.

Automated summary

Resistive random access memory (RRAM) is a crucial technology for digital storage and analog computing, relying on the formation and rupture of nanoscale conductive filaments. By using scanning thermal microscopy, researchers directly measure the temperature of these filaments and find that they can reach up to 1300 degrees C during steady-state operation, while electrode temperatures rarely exceed 350 degrees C. This highlights the importance of thermal engineering for nanoscale RRAM.