Effect of Substrate Temperature on the Properties of RF Magnetron Sputtered p-CuInOx Thin Films for Transparent Heterojunction Devices

Copper indium oxide (CuInOx) thin films were deposited by the RF magnetron sputtering technique using a Cu2O:In2O3 target at varying substrate temperatures up to 400 degrees C. Mutually exclusive requirements of having a p-type thin film along with increased conductivity and high transparency were achieved by controlling the migration of indium oxide phases during the sputtering process, as verified by the XPS studies. A morphological study performed using SEM further confirmed the crystallization and the grain growth (95-135 nm) with increasing substrate temperatures, resulting in superior conductivity and an enhanced transparency of more than 70% in the 400-700 nm range. This is due to the controlled replacement of copper sites with indium while maintaining the p-type characteristic of the thin film. Optical studies carried out on the films indicated a bandgap change in the range of 2.46-2.99 eV as a function of substrate heating. A p-CuInOx/n-Si heterojunction was fabricated with a measured knee voltage of 0.85 V. The photovoltaic behavior of the device was investigated and initial solar cell parameters are reported.

Automated summary

Copper indium oxide (CuInOx) thin films were deposited using RF magnetron sputtering technique at various substrate temperatures up to 400 degrees C, achieving a p-type thin film with increased conductivity and high transparency. XPS studies confirmed the controlled migration of indium oxide phases during sputtering, leading to superior conductivity and transparency with increasing substrate temperatures. The fabricated p-CuInOx/n-Si heterojunction had a knee voltage of 0.85 V, and initial solar cell parameters were reported after investigating the photovoltaic behavior of the device.