Journal
TSINGHUA SCIENCE AND TECHNOLOGY
Volume 27, Issue 3, Pages 534-558Publisher
TSINGHUA UNIV PRESS
DOI: 10.26599/TST.2021.9010049
Keywords
advanced process; gate-all-around devices; three-dimensional (3D) integration; high-mobility channel; integrated circuits
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Funding
- National Key Project of Science and Technology of China [2017ZX02315001-002]
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This article reviews advanced process and electron device technology of integrated circuits, including recent featuring progress and potential solutions for future development. It discusses pushing the performance of FinFET, developing three-dimensional integration schemes, and concludes that Moore's law will continue in the next 15 years.
This article reviews advanced process and electron device technology of integrated circuits, including recent featuring progress and potential solutions for future development. In 5 years, for pushing the performance of fin field-effect transistors (FinFET) to its limitations, several processes and device boosters are provided. Then, the three-dimensional (3D) integration schemes with alternative materials and device architectures will pave paths for future technology evolution. Finally, it could be concluded that Moore's law will undoubtedly continue in the next 15 years.
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