Journal
RESULTS IN PHYSICS
Volume 34, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.rinp.2022.105336
Keywords
Si nanocrystal; Fabry-Perot; Waveguide; High-pressure hydrogenation; Lasing
Funding
- Science and Technology Commission of Shanghai Municipality [18JC14111500]
- National Natural Science Foundation of China [62075044]
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A luminescent Si nanocrystal thin film with high photoluminescence quantum yield was successfully fabricated, achieving a net optical gain structure and threshold behavior under optical pumping. Various laser characteristics were observed, such as spectral narrowing, polarization, and small emission angles.
A luminescent Si nanocrystal (SiNC) thin film with photoluminescence quantum yield (PLQY) > 70% was made by using hydrogen silsesquioxane (HSQ), followed by long-time high-pressure hydrogenation. A net optical gain of 524 +/- 21 cm(-1) was obtained by means of variable stripe length-shifting excitation spot (VSL-SES). A rectangularly shaped SiO2 Fabry-Perot (F-P) cavity with size of 1.5 mu m (width) x 0.7 mu m (height) x 2000 mu m (length) was made on top of the SiNC thin film. The waveguide F-P device was pumped with a 400 nm femtosecond pulsed laser. A threshold behavior of the light emission intensity as a function of the pumping power was observed. Other lasing characteristics including spectral narrowing, polarization of the emission, and small emission angle were also observed beyond the threshold pumping power.
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