4.6 Article

Precise control of surface oxygen vacancies in ZnO nanoparticles for extremely high acetone sensing response

Journal

JOURNAL OF ADVANCED CERAMICS
Volume 11, Issue 5, Pages 769-783

Publisher

SPRINGER
DOI: 10.1007/s40145-022-0570-x

Keywords

gas sensors; acetone; metal oxide semiconductors (MOSs); ZnO nanoparticles (NPs); H2O2 treatment

Funding

  1. Ministry of Trade, Industry & Energy (MOTIE, Republic of Korea) [20013621]
  2. National Research Foundation of Korea (NRF) - Republic of Korean Government (Ministry of Science and ICT) [2019R1A6A1A11 055660]
  3. International Energy Joint R&D Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) from the Ministry of Trade, Industry & Energy, Republic of Korea [20208510010310]
  4. Basic Research in Science and Engineering Program of the NRF [2021R1A2C1013690]
  5. Korea Evaluation Institute of Industrial Technology (KEIT) [20208510010310] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
  6. National Research Foundation of Korea [2021R1A2C1013690] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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The study demonstrates a simple method to control surface oxygen vacancies on commercial ZnO nanpowders, enhancing acetone sensing performance significantly. The combination of H2O2 treatment and thermal annealing produces optimal surface defects leading to improved sensor response, surpassing previous acetone sensors based on metal oxide semiconductors.
ZnO has been studied intensely for chemical sensors due to its high sensitivity and fast response. Here, we present a simple approach to precisely control oxygen vacancy contents to provide significantly enhanced acetone sensing performance of commercial ZnO nanopowders. A combination of H2O2 treatment and thermal annealing produces optimal surface defects with oxygen vacancies on the ZnO nanoparticles (NPs). The highest response of similar to 27,562 was achieved for 10 ppm acetone in 0.125 M H2O2 treated/annealed ZnO NPs at the optimal working temperature of 400 degrees C, which is significantly higher than that of reported so far in various acetone sensors based on metal oxide semiconductors (MOSs). Furthermore, first-principles calculations indicate that pre-adsorbed O formed on the surface of H2O2 treated ZnO NPs can provide favorable adsorption energy, especially for acetone detection, due to strong bidentate bonding between carbonyl C atom of acetone molecules and pre-adsorbed O on the ZnO surface. Our study demonstrates that controlling surface oxygen vacancies by H2O2 treatment and re-annealing at optimal temperature is an effective method to improve the sensing properties of commercial MOS materials.

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