High-Efficiency p-n Homojunction Perovskite and CIGS Tandem Solar Cell

Efficiency has been known to be one of the most important factors in a solar cell. This article presents the results of a simulation performed on a perovskite/CIGS dual-junction solar cell. In this report, first, a top solar cell consisting of a perovskite absorber layer is simulated using the pn-junction; the separation and transfer of carriers in this structure are done by the internal electric field. The pn-junction has a discharge area smaller than the pin-junction, which increases carrier recombination and reduces optical losses. The perovskite band gap of 1.9 eV is considered, and the efficiency is 21.65% using the Au electrode. Then, the bottom solar cell is fabricated with a CIGS absorbent layer with a 1.4 eV band gap and an efficiency of 11.46%. After simulating and evaluating the performance of the top and bottom solar cells independently, both cells were simulated and examined for the dual-junction state. Since the perovskite and CIGS band gaps are both adjustable, these two materials can act as a proper partner for an absorbent layer in a dual-junction solar cell. In this structure, instead of the usual connection of p-i-n and n-i-p perovskite, n-type and p-type homojunction perovskite connection is used, in which the transfer and separation of carriers are done by an internal electric field. Due to the fact that in this structure, the discharge area is smaller, the recombination of carriers is increased, and the light losses are reduced, which will increase the absorption and efficiency of the cell. The results show that in the tandem design, we encounter an increase in V-oc (2.25 V), thus increasing the efficiency of the solar cell (30.71%).

Automated summary

This study simulates and evaluates the performance of a perovskite/CIGS dual-junction solar cell, and finds that using an n-type and p-type homojunction perovskite connection can increase the efficiency of the solar cell by reducing carrier recombination and optical losses.