Crucial Role of Oxygen Vacancies in Scintillation and Optical Properties of Undoped and Al-Doped β-Ga2O3 Single Crystals

In this paper, the effects of oxygen vacancy and gallium vacancy on the optical and scintillation properties of undoped beta-Ga2O3 crystal and 2.5 mol % Al doped gallium oxide were investigated. For the undoped beta-Ga2O3, the transmittance is improved after annealing in oxygen or nitrogen atmosphere. After the introduction of Al element, the absorption cutoff appears slightly blue shift, and the band gap increases. For the undoped as-grown beta-Ga2O3 single crystals, the decay time consists of a fast component (tau(1)) of the order of nanoseconds, and two slow components (tau(2), tau(3)) of tens to hundreds of nanoseconds. The contribution of the fast decay time component in the decay times is 2.78%. While for Al-doped beta-Ga2O3, the faster (tau(1)) time is 2.33 ns for the as-grown one, and the contribution is 68.02%. However, the pulse height spectrum shows that the introduction of 2.5 mol% Al will reduce the light yield of the beta-Ga2O3 crystal.

Automated summary

This paper investigates the effects of oxygen vacancy and gallium vacancy on the optical and scintillation properties of undoped beta-Ga2O3 crystal and 2.5 mol% Al doped gallium oxide. The results show that the absorption cutoff slightly blue shifts and the band gap increases after the introduction of Al element. The contribution of the decay time component increases significantly after Al doping, but the light yield of the beta-Ga2O3 crystal is reduced.