Journal
CRYSTALS
Volume 12, Issue 3, Pages -Publisher
MDPI
DOI: 10.3390/cryst12030406
Keywords
Ga2O3; power device; Schottky barrier diodes; field-effect transistors
Funding
- National Natural Science Foundation of China [61774019, 61874059, 61904083, 62074080]
- Natural Science Foundation of Jiangsu Province [BK20201206]
- Natural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications [XK1060921002]
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This review article summarizes recent advances in the experimental and theoretical research on β-Ga2O3-based power devices, providing comprehensive guidance for further development by discussing the operating mechanisms and obstacles to be addressed.
Ga2O3 has gained intensive attention for the continuing myth of the electronics as a new-generation wide bandgap semiconductor, owing to its natural physical and chemical properties. In this review article, we selectively summarized the recent advances on the experimental and theoretical demonstration of beta-Ga2O3-based power devices, including Schottky barrier diodes and field-effect transistors, aiming for an inherent comprehending of the operating mechanisms, discussion on the obstacles to be addressed, and providing some comprehensive guidance for further developments. In the short run, Ga2O3 may well be promising to lead power electronics.
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