Dielectric Properties of Mg2TiO4-Doped Ca0.65Sr0.35Zr0.65Ti0.35O3 with High Withstand Voltage and Low Loss

Mg2TiO4-doped Ca0.65Sr0.35Zr0.65Ti0.35O3 (CSZT) thin films with different Mg2TiO4 concentrations were deposited on the LaNiO3(LNO)/p-Si substrate using radio-frequency magnetron sputtering technology. The dielectric response of the prepared x% Mg2TiO4-CSZT thin films with frequency, voltage, and temperature was systematically studied. The tan delta and leakage current density of CSZT thin films were reduced effectively by introducing Mg2TiO4 content. The prepared 6% Mg2TiO4-CSZT thin film, due to its low loss (tan delta similar to 0.01 at 1 MHz), satisfied temperature stability (TCC similar to-68 ppm/degrees C, from -55 degrees C to 205 degrees C), high withstand voltage (>160 V), and small leakage current density (about 3.34 x 10(-6) A/cm(2) at operating voltage of 160 V). This may be useful for capacitor materials in the next generation of portable electronic systems.

Automated summary

Mg2TiO4-doped CSZT thin films were successfully deposited using radio-frequency magnetron sputtering technology, and their dielectric response under different conditions was investigated. The introduction of Mg2TiO4 effectively reduced the loss factor and leakage current density of the films. The prepared 6% Mg2TiO4-CSZT thin film showed low loss, good temperature stability, high withstand voltage, and small leakage current density.