Low Forward Voltage III-Nitride Red Micro-Light-Emitting Diodes on a Strain Relaxed Template with an InGaN Decomposition Layer

In this study, III-nitride red micro-light-emitting diodes (mu LEDs) with ultralow forward voltage are demonstrated on a strain relaxed template. The forward voltage ranges between 2.00 V and 2.05 V at 20 A/cm(2) for device dimensions from 5 x 5 to 100 x 100 mu m(2). The mu LEDs emit at 692 nm at 5 A/cm(2) and 637 nm at 100 A/cm(2), corresponding to a blueshift of 55 nm due to the screening of the internal electric field in the quantum wells. The maximum external quantum efficiency and wall-plug efficiency of mu LEDs are 0.31% and 0.21%, respectively. This suggests that efficient III-nitride red mu LEDs can be realized with further material optimizations.

Automated summary

This study demonstrates III-nitride red micro-light-emitting diodes (μLEDs) with ultralow forward voltage on a strain relaxed template. The μLEDs emit light at different wavelengths due to the screening of the internal electric field in the quantum wells. However, the maximum external quantum efficiency and wall-plug efficiency of the μLEDs are relatively low, suggesting the need for further material optimization.