Progress of InGaN-Based Red Micro-Light Emitting Diodes

InGaN-based red micro-size light-emitting diodes (mu LEDs) have become very attractive. Compared to common AlInGaP-based red mu LEDs, the external quantum efficiency (EQE) of InGaN red mu LEDs has less influence from the size effect. Moreover, the InGaN red mu LEDs exhibit a much more robust device performance even operating at a high temperature of up to 400 K. We review the progress of InGaN red mu LEDs. Novel growth methods to relax the strain and increase the growth temperature of InGaN red quantum wells are discussed.

Automated summary

InGaN-based red micro-size light-emitting diodes (μLEDs) are highly attractive due to their less influenced external quantum efficiency (EQE) by size effect compared to common AlInGaP-based red μLEDs. Additionally, InGaN red μLEDs exhibit robust device performance even at high temperatures up to 400K. This review discusses the progress of InGaN red μLEDs and explores novel growth methods to relax the strain and increase the growth temperature of InGaN red quantum wells.