Luminescence Properties of Ho2O3-Doped Y2O3 Stabilized ZrO2 Single Crystals

Single crystals of Ho2O3-doped Y2O3 stabilized ZrO2 (YSZ) with different Y2O3 and Ho2O3 contents were grown by the optical floating zone method. XRD and Raman spectra were measured and showed that crystal samples all had tetragonal structures. Measurements of positron annihilation lifetime spectra indicated that the increase in Y2O3 concentration led to the increases of defects and mean positron lifetime, which enhanced the scattering of light and reduced the luminous intensity and the quantum yield (QY) of the crystal. Under the excitation at 446 nm, photoluminescence (PL) spectra of Ho2O3 (-)doped YSZ crystals showed emission peaks at 540, 551, 670, and 757 nm corresponding to Ho3+ transitions from S-5(2), F-5(4), F-5(5), and I-5(4) excited states to the I-5(8) ground state, respectively. At low Ho2O3-doped concentrations (0.10-0.50 mol%), the overall emission intensity increased with Ho2O3 contents, reached the maximum value at 0.50 mol%, then decreased with higher Ho2O3 contents, probably as a result of increased non-radiative relaxation caused by increased interactions between Ho3+ ions. Quenching of the PL occurred at Ho2O3 concentrations > 0.5 mol% and due to the electric dipole-dipole interaction. The calculated chromaticity coordinates (CIE) were approximately (0.307, 0.683) and the color purity achieved 99.6%. The results showed that Ho2O3: YSZ crystals were suitable for green light-emitting devices.

Automated summary

Single crystals of Y2O3-stabilized ZrO2 doped with different amounts of Ho2O3 were successfully grown using the optical floating zone method. XRD and Raman spectra confirmed the tetragonal structure of the crystal samples. Photoluminescence spectra of the Ho2O3-doped YSZ crystals showed emission peaks at specific wavelengths corresponding to Ho3+ transitions, with the emission intensity increasing with Ho2O3 content up to a certain point and then decreasing. This study demonstrated that the Ho2O3:YSZ crystals are suitable for green light-emitting devices with high color purity.