Growth and Characterization of GaN/InxGa1-xN/InyAl1-yN Quantum Wells by Plasma-Assisted Molecular Beam Epitaxy

The nearly lattice-matched InxGa1-xN/InyAl1-yN epi-layers were grown on a GaN template by plasma-assisted molecular beam epitaxy with a metal modulation technique. The band-gap energy of InxGa1-xN QW in photoluminescence measurement was estimated to be 2.89 eV and the indium concentration (x) was 14.8%. In X-ray photoelectric spectroscopy, we obtained an indium concentration (y) in the InyAl1-yN barrier of 25.9% and the band-offset was estimated to be 4.31 eV. From the atomic layer measurements from high-resolution transmission electron microscopy, the lattice misfit between the InxGa1-xN QW and InyAl1-yN barrier was 0.71%. The lattice-matched InxGa1-xN/InyAl1-yN QWs can therefore be evaluated from the band profiles of III-nitrides for engineering of full-visible-light emitting diode in optoelectronic application.

Automated summary

Key properties of the lattice-matched InxGa1-xN/InyAl1-yN quantum wells, such as band-gap energy, indium concentration, and lattice mismatch, were measured using different techniques. The findings suggest that these technologies will be beneficial in the fabrication of full-visible-light emitting diodes.