Scalable production of p-MoTe2/n-MoS2 heterostructure array and its application for self-powered photodetectors and CMOS inverters

Recent advances in van der Waals heterostructures have extensively promoted the development of new-generation electronic devices. However, the normally utilized mechanical exfoliation method for preparing two-dimensional semiconductors is not scalable for circuit-level application. Herein, the fabrication and characterization of wafer-scale heterostructure arrays composed of multilayer 2H-MoTe2 and single-layer 2H-MoS2 are demonstrated. Owing to the type-II band alignment facilitating efficient electron-hole separation, the devices fabricated by the p-MoTe2/n-MoS2 heterostructure exhibit an excellent gate-tunable PN diode behavior, with a rectification ratio of over 10(3) and a self-powered photocurrent with a remarkable on-off ratio of similar to 10(3) at a zero bias voltage. Complementary inverter arrays based on p-MoTe2/n-MoS2 are also demonstrated. The scalable production of p-n junction devices and complementary inverters paves the way for future integrated platforms in photoelectric detection and logic computation.

Automated summary

The fabrication and characterization of wafer-scale heterostructure arrays composed of multilayer 2H-MoTe2 and single-layer 2H-MoS2 are demonstrated. The p-MoTe2/n-MoS2 heterostructure devices exhibit an excellent gate-tunable PN diode behavior and complementary inverters.