Tunable Switching Behavior of GO-Based Memristors Using Thermal Reduction

This work reports on the fabrication of a novel planar reduced graphene oxide (rGO) memristor (MR) device. For the first time in the literature, the MR tunable resistive switching behavior is controlled by the GO reduction time at a constant temperature. The device is fabricated using standard microfabrication techniques on a flexible cyclic olefin copolymer substrate (COC). Thermal reduction of the GO layer at low temperatures (100 degrees C) avoids the drawbacks of chemical reduction methods such as toxicity and electrode metal damage during fabrication, while allowing for fine-tuning of the MR's switching behavior. The device has analog switching characteristics, with a range of different resistance states. By taking advantage of the slow nature of GO thermal annealing, the switching properties of the rGO memristors can be precisely controlled by adjusting the reduction period. At short annealing times (i.e., T < 20 h), the devices switch from high to low resistance states, while at longer annealing times the switching behavior is reversed, with the device switching from low to high resistance states (LRS to HRS). Resistive switching occurs as a result of the diffusion and removal of the oxygen functional groups in the GO film caused by Joule heating induced by the electric current. Complete electrical characterization tests are presented along with wettability and X-ray diffraction (XRD) tests. This work opens a new vision for realizing rGO-based MR devices with tunable switching properties, broadening the application horizon of the device.

Automated summary

This study reports the fabrication of a novel planar reduced graphene oxide memristor device, with tunable resistive switching behavior controlled by the reduction time. The device has analog switching characteristics and can be precisely controlled by adjusting the reduction period.