Journal
NANOMATERIALS
Volume 12, Issue 7, Pages -Publisher
MDPI
DOI: 10.3390/nano12071090
Keywords
InSb nanoflags; InP nanowires; chemical beam epitaxy; regular array; growth modeling
Categories
Funding
- SUPERTOP project, QUANTERA ERA-NET Cofound in Quantum Technologies (H2020) [731473]
- FET-OPEN project And QC (H2020 Grant) [828948]
- Russian Science Foundation [19-72-30004]
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In this study, InSb nanoflags were grown on Au-catalyzed InP nanowires using chemical beam epitaxy, forming regular arrays on patterned substrates. The evolution of nanoflag dimensions with growth time was investigated, and a model was proposed to explain the observed nonlinear time dependence of nanoflag length and width increase.
InSb nanoflags are grown by chemical beam epitaxy in regular arrays on top of Au-catalyzed InP nanowires synthesized on patterned SiO2/InP(111)B substrates. Two-dimensional geometry of the nanoflags is achieved by stopping the substrate rotation in the step of the InSb growth. Evolution of the nanoflag length, thickness and width with the growth time is studied for different pitches (distances in one of the two directions of the substrate plane). A model is presented which explains the observed non-linear time dependence of the nanoflag length, saturation of their thickness and gradual increase in the width by the shadowing effect for re-emitted Sb flux. These results might be useful for morphological control of InSb and other III-V nanoflags grown in regular arrays.
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