Journal
NANOMATERIALS
Volume 12, Issue 5, Pages -Publisher
MDPI
DOI: 10.3390/nano12050870
Keywords
ZnO nanowire; gated field emitter arrays; electrical contact; transconductance
Categories
Funding
- National Key Research and Development Program of China [2016YFA0202001]
- Science and Technology Department of Guangdong Province [2020B0101020002]
- Fundamental Research Funds for the Central Universities
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This paper investigates the effect of pixel density on the emission performance of gated ZnO nanowire arrays. Simulation and experimental results show that the fabricated arrays, with optimized gate modulation, exhibit high emission current and effective gate control.
Gated ZnO nanowire field emitter arrays (FEAs) have important applications in large-area vacuum microelectronic devices such as flat panel X-ray sources and photodetectors. As the application requires high-pixel-density FEAs, how the pixel density affects the emission performance of the gated ZnO nanowire FEAs needs investigating. In this paper, the performance of coaxis planar -gated ZnO nanowire FEAs was simulated under different pixel sizes while keeping the lateral geometric parameter in proportion. The variations in emission current and gate modulation with pixel size were obtained. Using the obtained device parameters, the coaxis planar-gated ZnO nanowire FEAs were prepared. Field emission measurement results showed that a current density of 3.2 mA/cm(2) was achieved from the fabricated ZnO nanowire FEAs when the gate voltage was 140 V. A transconductance of 253 nS was obtained, indicating effective gate control. The improved performance is attributed to optimized gate modulation.
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