Single-Walled Carbon Nanotube-Germanium Heterojunction for High-Performance Near-Infrared Photodetector

In this research, we report on a high-performance near-infrared (near-IR) photodetector based on single-walled carbon nanotube-germanium (SWCNT-Ge) heterojunction by assembling SWCNT films onto n-type Ge substrate with ozone treatment. The ozone doping enhances the conductivity of carbon nanotube films and the formed interfacial oxide layer (GeOx) suppresses the leakage current and carriers' recombination. The responsivity and detectivity in the near-IR region are estimated to be 362 mA W-1 and 7.22 x 10(11) cm Hz(1/2) W-1, respectively, which are three times the value of the untreated device. Moreover, a rapid response time of similar to 11 mu s is obtained simultaneously. These results suggest that the simple SWCNT-Ge structure and ozone treatment method might be utilized to fabricate high-performance and low-cost near-IR photodetectors.

Automated summary

A high-performance near-IR photodetector is fabricated by assembling SWCNT films onto n-type Ge substrate with ozone treatment, and the formed oxide layer suppresses leakage current and carriers' recombination. The device exhibits enhanced responsivity, detectivity, and rapid response time.