Harmonic Generation in Biased Semiconductor Superlattices

Semiconductor superlattices are proven nanomaterials for THz nonlinear optics by means of high order harmonic generation. Seminal approaches leading to a perfectly antisymmetric current-voltage (I-V.) curve predict the generation of odd harmonics only in the absence of a bias. However, even harmonics at high orders have been detected in several experiments. Their generation has been explained by considering deviations from the current flow symmetry that break the exact antisymmetry of the I-V. curve. In this paper, we focus on another issue found experimentally that has also not been explained, namely the harmonic power output asymmetry from negative to positive applied bias. Once more, breaking the I-V. flow symmetry explains the experiments and leads to a further tool to design the power output of these materials. Furthermore, a new approach for the Boltzmann Equation under relaxation-rate approximation eliminates numerical difficulties generated by a previous theory. This leads to very efficient analytical expressions that can be used for both fundamental physics/optics/material sciences and realistic device development and simulations.

Automated summary

Semiconductor superlattices are important nanomaterials for THz nonlinear optics. Our research focuses on two experimental phenomena that have not been explained: the generation of even harmonics at high orders and the asymmetry of harmonic power output from negative to positive bias. By breaking the symmetry of current flow, we explain these phenomena and propose a new method for designing the power output of these materials. Additionally, we develop a new approach for the Boltzmann Equation under relaxation-rate approximation, which improves numerical calculations.