4.7 Article

Transport Simulation of Graphene Devices with a Generic Potential in the Presence of an Orthogonal Magnetic Field

Journal

NANOMATERIALS
Volume 12, Issue 7, Pages -

Publisher

MDPI
DOI: 10.3390/nano12071087

Keywords

graphene device; magnetic field; simulation; envelope function

Funding

  1. Italian Ministry of Education and Research (MIUR)
  2. University of Pisa

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The effect of an orthogonal magnetic field on transport in graphene devices is studied using a numerical simulator based on the Dirac equation. Different approaches are compared and the extended code is validated by simulating various magnetic-related phenomena.
The effect of an orthogonal magnetic field is introduced into a numerical simulator, based on the solution of the Dirac equation in the reciprocal space, for the study of transport in graphene devices consisting of armchair ribbons with a generic potential. Different approaches are proposed to reach this aim. Their efficiency and range of applicability are compared, with particular focus on the requirements in terms of model setup and on the possible numerical issues that may arise. Then, the extended code is successfully validated, simulating several interesting magnetic-related phenomena in graphene devices, including magnetic-field-induced energy-gap modulation, coherent electron focusing, and Aharonov-Bohm interference effects.

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