Radiation-Induced Nucleation and Growth of CaSi2 Crystals, Both Directly during the Epitaxial CaF2 Growth and after the CaF2 Film Formation

The radiation-induced phenomena of CaSi2 crystal growth were investigated, both directly during the epitaxial CaF2 growth on Si (111) and film irradiation with fast electrons on Si (111) after its formation, while maintaining the specified film thickness, substrate temperature and radiation dose. Irradiation in the process of the epitaxial CaF2 film growth leads to the formation of CaSi2 nanowhiskers with an average size of 5 mu m oriented along the direction . The electron irradiation of the formed film, under similar conditions, leads to the homogeneous nucleation of CaSi2 crystals and their proliferation as inclusions in the CaF2 film. It is shown that both approaches lead to the formation of CaSi2 crystals of the 3R polymorph in the irradiated region of a 10 nm thick CaF2 layer.

Automated summary

The radiation-induced phenomena during CaSi2 crystal growth were investigated in the epitaxial CaF2 growth process on Si (111) and after film formation with electron irradiation on Si (111). Both approaches lead to the formation of CaSi2 crystals in the irradiated region of the CaF2 film.