Ultrathin Sb2Se3 Nanowires for Polarimetric Imaging Photodetectors with a High Signal/Noise Ratio

This work presents a study on the optical applications of chemical vapor deposition-grown Sb2Se3 nanowires in polarized single nanowire photodetectors. High-quality Sb2Se3 nanowires are obtained with diameters as small as approximate to 15 nm, which is the first report for ultrathin Sb2Se3 nanowires. The fabricated Sb2Se3 nanowire-based photodetector presents a low shot noise of approximate to 9 x 10(-16) A Hz(-1/2), a large signal/noise ratio of 1436.55, a high responsivity of 3.61 A W-1, and a high specific detectivity of 2.36 x 10(11) Jones, which can be attributed to the high-quality crystalline nanowires obtained. More interestingly, the Sb2Se3 nanowire-based photodetectors exhibit broadband polarized photoresponse to incident light with wavelengths ranging from visible to near-infrared (532 - 830 nm). A linearly dichroic ratio of 1.71 is obtained for the 830 nm light illumination. The Sb2Se3 nanowire detectors also present appropriate polarimetric imaging quality, revealing the potential of Sb2Se3 nanowires for polarimetric imaging applications.

Automated summary

This study presents the optical applications of chemical vapor deposition-grown Sb2Se3 nanowires in polarized single nanowire photodetectors. High-quality Sb2Se3 nanowires exhibit low shot noise, high responsivity, and high specific detectivity. Additionally, the Sb2Se3 nanowires show broadband polarized photoresponse and appropriate polarimetric imaging quality.